Band-Edge Luminescence at Room Temperature of Boron Nitride Synthesized by Thermal Chemical Vapor Phase Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
1. Ultraviolet luminescence spectra of boron nitride single crystals grown under high pressure and high temperature
2. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
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5. Atomic layer deposition of boron nitride using sequential exposures of BCl3 and NH3
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1. Hexagonal Boron Nitride on III–V Compounds: A Review of the Synthesis and Applications;Materials;2022-06-22
2. Recombination dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by chemical vapor deposition using carbon-free precursors;Applied Physics Letters;2022-06-06
3. Effects of the Substrate Structure on the CVD Growth of Two-Dimensional Hexagonal Boron Nitride;The Journal of Physical Chemistry C;2022-04-05
4. Room-temperature intrinsic excitonic luminescence from a hexagonal boron nitride thin film grown on a sapphire substrate by low-pressure chemical vapor deposition using BCl3 as a boron source;Japanese Journal of Applied Physics;2021-06-23
5. Synthesis of hexagonal boron nitride: From bulk crystals to atomically thin films;Progress in Crystal Growth and Characterization of Materials;2021-05
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