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GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices

  • Published:1999-05-01 Issue:Part 2, No. 5A Volume:38 Page:L508-L511
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Koh Shinji,Kondo Takashi,Ebihara Minoru,Ishiwada Tetsuya,Sawada Hidetaka,Ichinose Hideki,Shoji Ichiro,Ito Ryoichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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4. Improvement of Multiple-plate GaAs Stacks for Mid-infrared Quasi-phase-matching Wavelength-conversion Devices Fabricated with Room-temperature Bonding;2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC);2021-06-21

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