Study of HF Defects in Thin, Bonded Silicon-on-Insulator Dependent on Original Wafers-Reference-Cited by-同舟云学术

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Study of HF Defects in Thin, Bonded Silicon-on-Insulator Dependent on Original Wafers

Published:1999-05-15 Issue:Part 1, No. 5A Volume:38 Page:2694-2698
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Aga Hiroji,Nakano Masatake,Mitani Kiyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and characterization of silicon-on-insulator wafers;Micro and Nano Systems Letters;2023-11-13

2. Effect of crystallographic orientation on tensile fractures of (100) and (110) silicon microstructures fabricated from silicon‐on‐insulator wafers;Micro & Nano Letters;2015-12

3. An Experimental Study of Properties of Ultrathin Si Layer with Bonded Si/SiO₂ Interface;Advanced Materials Research;2013-11

4. Properties of silicon nanolayers on insulator;Materials Science and Engineering: B;2006-12

5. FET on ultrathin SOI (fabrication and research);SPIE Proceedings;2004-05-28

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