Observation of Extremely Low Defect Densities in Silicon Wafers-Reference-Cited by-同舟云学术

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Observation of Extremely Low Defect Densities in Silicon Wafers

Published:1999-04-15 Issue:Part 1, No. 4A Volume:38 Page:1852-1857
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Schmolke Rüdiger,Gräf Dieter,Kirchner Ralf,Schauer Reinhard,Werner Norbert,Mayer Erwin-Peter,Wagner Peter

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode;Japanese Journal of Applied Physics;2006-04-25

2. High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition;Thin Solid Films;2003-11

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