Preparation and Electrical Properties of Rhombohedral Pb(ZrxTi1-x)O3Thin Films by RF Magnetron Sputtering Method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOxbottom electrode for the La-doped Pb(Zr,Ti)O3ferroelectric capacitor;Japanese Journal of Applied Physics;2018-08-31
2. Control of La-doped Pb(Zr,Ti)O3crystalline orientation and its influence on the properties of ferroelectric random access memory;Japanese Journal of Applied Physics;2017-09-25
3. Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films;Journal of Applied Physics;2011-02-15
4. Enhanced ferroelectric properties of Pb(Zr0.80Ti0.20)O3/PbO thin films prepared by radio frequency magnetron sputtering;Materials Research Bulletin;2008-03
5. Enhanced ferroelectric property of (Pb0.95Ca0.05)(Nb0.02Zr0.80Ti0.20)O3 thin films prepared by RF magnetron sputtering;Applied Surface Science;2007-05
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