Reduction of Spontaneous Surface Segregation in (InP)2/(GaP)2Quantum Wells Grown on Tilted Substrates-Reference-Cited by-同舟云学术

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Reduction of Spontaneous Surface Segregation in (InP)2/(GaP)2Quantum Wells Grown on Tilted Substrates

Published:1999-01-15 Issue:Part 1, No. 1A Volume:38 Page:17-21
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Cheng Yi-Cheng,Tai Kuochou,Chou Shu-Tsun,Huang Kai-Feng,Lin Wen-Jen,Lin Alpha C. H.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates;physica status solidi (c);2011-03-31

2. Investigation of the Electrostatic Discharge Performance of GaN-Based Light-Emitting Diodes With Naturally Textured p-GaN Contact Layers Grown on Miscut Sapphire Substrates;IEEE Transactions on Electron Devices;2010-09

3. Case study research methodology for publishing developments in ICT‐facilitated learning in higher education – a prescriptive approach;Innovations in Education and Teaching International;2009-02

4. GaN-based light-emitting diodes prepared on vicinal sapphire substrates;IET Optoelectronics;2007-02-01

5. Structural analysis of indium sulphide thin films elaborated by chemical bath deposition;Thin Solid Films;2005-02

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