Pressure and Temperature Dependences of the Electronic Structure of CeIrSi3 Probed by Resonant X-ray Emission Spectroscopy-Reference-Cited by-同舟云学术

Pressure and Temperature Dependences of the Electronic Structure of CeIrSi3 Probed by Resonant X-ray Emission Spectroscopy

Published:2011-12-15 Issue:12 Volume:80 Page:124701
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Yamaoka Hitoshi¹,Jarrige Ignace²,Tsujii Naohito³,Kotani Akio¹⁴,Lin Jung-Fu⁵,Honda Fuminori⁶,Settai Rikio⁶,Ōnuki Yoshichika⁶,Hiraoka Nozumu⁷,Ishii Hirofumi⁷,Tsuei Ku-Ding⁷

Affiliation:

1. Harima Institute, The Institute of Physical and Chemical Research (RIKEN), Sayo, Hyogo 679-5148, Japan

2. Japan Atomic Energy Agency, SPring-8, Sayo, Hyogo 679-5148, Japan

3. Quantum Beam Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan

4. Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan

5. Department of Geological Sciences, The University of Texas at Austin, Austin, TX 78712, U.S.A.

6. Faculty of Science, Osaka University, Toyonaka, Osaka 569-0043, Japan

7. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.1143/JPSJ.80.124701

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