Effect of Phosphorus Atom in Self-Assembled Monolayer as a Drift Barrier for Advanced Copper Interconnects
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=6/a=065003/pdf
Reference16 articles.
1. Reliability challenges for copper low-k dielectrics and copper diffusion barriers
2. Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization
3. Robust self-assembled monolayer as diffusion barrier for copper metallization
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5. Self-Assembled Monolayers as Cu Diffusion Barriers for Ultralow-k Dielectrics
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