High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method-Reference-Cited by-同舟云学术

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High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method

Published:2011-04-20 Issue:4 Volume:50 Page:04DC08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tsunomura Takaaki,Kumar Anil,Mizutani Tomoko,Nishida Akio,Takeuchi Kiyoshi,Inaba Satoshi,Kamohara Shiro,Terada Kazuo,Hiramoto Toshiro,Mogami Tohru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference17 articles.

1. The impact of intrinsic device fluctuations on CMOS SRAM cell stability

2. Re-Examination of Impact of Intrinsic Dopant Fluctuations on Static RAM (SRAM) Static Noise Margin

3. Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

4. Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond

5. Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiple three-dimensional bottleneck barrier heights regarding fluctuated threshold voltage by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors;Japanese Journal of Applied Physics;2022-05-27

2. Cause analysis of width-dependence of on-current variability in thin gate-all-around silicon nanowire MOSFET;Japanese Journal of Applied Physics;2022-02-07

3. Analysis of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs of 4nm Width;IEEE SILICON NANOELE;2021

4. Dependence of three-dimensional bottleneck barrier height minimum on threshold voltage fluctuated by ion implantation of source and drain extensions in silicon-on-insulator triple-gate fin-type field-effect transistors;Japanese Journal of Applied Physics;2020-05-04

5. Three-dimensional exploration of the origin of threshold voltage fluctuation of silicon-on-insulator triple-gate fin-type field-effect transistors caused by ion implantation to source and drain extensions;Japanese Journal of Applied Physics;2019-05-16

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