Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference17 articles.
1. Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes
2. Richardson’s constant in inhomogeneous silicon carbide Schottky contacts
3. Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers
4. Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity
5. Defect-driven inhomogeneities in Ni∕4H–SiC Schottky barriers
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2. Observation of silicon carbide Schottky barrier diode under applied reverse bias using atomic force microscopy/Kelvin probe force microscopy/scanning capacitance force microscopy;Japanese Journal of Applied Physics;2017-07-19
3. Design, fabrication and modification of metal oxide semiconductor for improving conversion efficiency of excitonic solar cells;Coordination Chemistry Reviews;2016-08
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5. Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts;Japanese Journal of Applied Physics;2013-04-01
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