Fabrication of Polycrystalline Silicon Films from SiF4/H2/SiH4Gas Mixture Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition with In Situ Plasma Diagnostics and Their Structural Properties-Reference-Cited by-同舟云学术

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Fabrication of Polycrystalline Silicon Films from SiF4/H2/SiH4Gas Mixture Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition with In Situ Plasma Diagnostics and Their Structural Properties

Published:2000-06-15 Issue:Part 1, No. 6A Volume:39 Page:3294-3301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakahata Kouichi,Ro Kazuyoshi,Suemasu Atsushi,Kamiya Toshio,Fortmann Charles Michael,Shimizu Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Features of hydrogen reduction of SiF4 in ICP plasma;Spectrochimica Acta Part B: Atomic Spectroscopy;2022-09

2. Volcanic SiO2-cristobalite: A natural product of chemical vapor deposition;American Mineralogist;2020-04-01

3. Microcrystalline silicon thin films deposited by matrix-distributed electron cyclotron resonance plasma enhanced chemical vapor deposition using an SiF4 /H2chemistry;Journal of Physics D: Applied Physics;2016-06-21

4. Electrical properties of hydrogenated microcrystalline silicon carbon alloys: effect of deposition parameters and light soaking;Journal of Physics D: Applied Physics;2015-06-16

5. Use of radio frequency power, silicon tetrafluoride and methane as parameters to tune structural properties of hydrogenated microcrystalline silicon carbon alloys;Journal of Physics D: Applied Physics;2014-10-27

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