Surface Morphology Development during Molecular Beam Epitaxy Growth on a GaAs(100) Vicinal Surface-Reference-Cited by-同舟云学术

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Surface Morphology Development during Molecular Beam Epitaxy Growth on a GaAs(100) Vicinal Surface

Published:2000-07-30 Issue:Part 1, No. 7B Volume:39 Page:4376-4379
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kawamura Takaaki,Maruta Junko,Ishii Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamics of In atom during InAs/GaAs(0 0 1) growth process;Applied Surface Science;2003-06

2. SPIN-RESOLVED PHOTOELECTRON SPECTROSCOPY OF ULTRATHIN Fe FILMS ON GaAs(001);Surface Review and Letters;2002-04

3. Role of As2 molecules on Ga-terminated GaAs(001) surfaces during the MBE growth;Journal of Crystal Growth;2002-03

4. Monte Carlo simulation of recovery process after MBE growth on GaAs( 100 );Surface Science;2001-11

5. Ultrathin epitaxial Fe films on vicinal GaAs(001): A study by spin-resolved photoelectron spectroscopy;Applied Physics Letters;2001-02-12

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