Correlation between Photoluminescence Intensity and Micro Structure in Amorphous Silicon Films Prepared by Reactive RF Sputtering-Reference-Cited by-同舟云学术

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Correlation between Photoluminescence Intensity and Micro Structure in Amorphous Silicon Films Prepared by Reactive RF Sputtering

Published:2000-08-15 Issue:Part 2, No. 8B Volume:39 Page:L844-L846
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Umezu Ikurou,Murota Takatoshi,Kawata Masayuki,Takashima Yoshiaki,Yoshida Ken-ichi,Inada Mitsuru,Sugimura Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy;Solar Energy Materials and Solar Cells;2016-02

2. Improvement of photoluminescence properties of porous silicon by silica passivation;Applied Surface Science;2006-04

3. Effect of structure on radiative recombination processes in amorphous silicon suboxide prepared by rf sputtering;Journal of Applied Physics;2002-11-15

4. Nanoscale anodization of an amorphous silicon surface with an atomic force microscope;Applied Physics Letters;2002-08-19

5. Nano-oxidation of an amorphous silicon surface with an atomic force microscope;Journal of Non-Crystalline Solids;2002-04

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