Crystal Originated Particle Induced Isolation Failure in Czochralski Silicon Wafers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Fabrication and characterization of silicon-on-insulator wafers;Micro and Nano Systems Letters;2023-11-13
2. Charge pumping in solar cell structure;Modern Electronic Materials;2023-09-30
3. An etchant for delineation of flow pattern defects in heavily doped p-type silicon wafers;Materials Science in Semiconductor Processing;2013-06
4. An Etchant for Delineation of Flow Pattern Defects in Heavily Doped n-type Silicon Wafers;ECS Transactions;2012-03-16
5. Characterization of a Czochralski grown silicon crystal doped with 1020 cm-3 germanium;Crystal Research and Technology;2010-11-12
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