Improvement in Antimony-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO2/Si Interface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Experimental Characterization of Antimony Dopant in Silicon Substrate;Acta Physica Polonica A;2016-07
2. Gate-Extension Overlap Control by Sb Tilt Implantation;IEICE Transactions on Electronics;2007-05-01
3. Diffusion and segregation of shallow As and Sb junctions in silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
4. As and Sb Diffusion Profiles in Thin Silicon-On-Insulator Wafers;Japanese Journal of Applied Physics;2003-07-15
5. Sb Pile-up at Oxide/Si Interface during Drive-in Diffusion after Predeposition Using Doped Oxide Source;Japanese Journal of Applied Physics;2003-03-15
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