Theoretical Analysis of Amorphous-Silicon Field-Effect-Transistors-Reference-Cited by-同舟云学术

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Theoretical Analysis of Amorphous-Silicon Field-Effect-Transistors

Published:1983-03-20 Issue:Part 1, No. 3 Volume:22 Page:511-517
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kishida Satoru,Naruke Yasuo,Uchida Yasutaka,Matsumura Masakiyo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 79 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. The same batch enabled threshold voltage tuning for vertically- or laterally-gated transparent InZnO thin-film transistors;physica status solidi (a);2017-03-31

4. Principles that Govern Electronic Transport in Organic Conductors and Transistors;Bulletin of the Chemical Society of Japan;2016-09-15

5. Half-Corbino short-channel amorphous In–Ga–Zn–O thin-film transistors with a-SiOx or a-SiOx/a-SiNx passivation layers;Solid-State Electronics;2016-06

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