Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode-Reference-Cited by-同舟云学术

Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode

Published:2008-04-25 Issue:4 Volume:47 Page:2585-2588
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishigaki Takashi,Tsuchiya Ryuta,Morita Yusuke,Sugii Nobuyuki,Kimura Shinichiro,Iwamatsu Toshiaki,Ipposhi Takashi,Inoue Yasuo,Hiramoto Toshiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference3 articles.

1. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

2. Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

3. Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Future of Ultra-Low Power SOTB CMOS Technology and Applications;The Frontiers Collection;2020

2. Low-power-consumption fully depleted silicon-on-insulator technology;Microelectronic Engineering;2015-01

3. Silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) circuits for ultralow power (ULP) applications;Silicon-On-Insulator (SOI) Technology;2014

4. Speed enhancement atVdd= 0.4 V and random τpdvariability reduction and analyisis of τpdvariability of silicon on thin buried oxide circuits;Japanese Journal of Applied Physics;2014-01-01

5. Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors;Japanese Journal of Applied Physics;2012-07-01