Overview
Reference11 articles.
1. JD Cressler, DL Harame, JH Comfort, JMC Stork, BS Meyerson, and TE Tice. Silicon-germanium heterojunction bipolar technology: the next leap in silicon? Technical Digest of the IEEE International Solid-State Circuits Conference, San Francisco, 1994, pp.24-27.
2. Re-engineering silicon: Si-Ge heterojunction bipolar technology
3. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
4. Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
5. DL Harame. High-performance BiCMOS process integration: trends, issues, and future directions. Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, 1997, pp.36-43.