1. J.N. Wiley and J.A. Reynolds, Device yield and reliability by specification of mask defects, Solid State Technol., July (1993).
2. K. Bhattacharyya,W.W. Volk [KLA-Tencor Corp. (USA)], B.J. Grenon [Grenon Consulting Inc. (USA)], D. Brown, and J. Ayala [IBM Microelectronics Div. (USA)], Investigation of reticle defect formation at DUV lithography, Proc. SPIE, 4889, 478-487 (2002).
3. Improving resolution in photolithography with a phase-shifting mask
4. Y. Yoshino, Y. Morishige, S. Watanabe, Y. Kyusho, A. Ueda, T. Haneda, andM. Oomiya [NEC Corp. (Japan)], High accuracy laser mask repair system LM700A, Proc. SPIE, 4186, 663-669 (2000).
5. P. Yan, Q. Qian, J. McCall, J. Langston, Y. Ger, J. Cho, and B. Hainsey, Effect of laser mask repair induced residue and quartz damage in sub-half micron DUV wafer process, Proc. SPIE, 2621, 158 (1995).