(Invited) Structural and Optical Properties of InN Quantum Dots Grown by an Alternating Supply of Source Precursors

Abstract

The high density 2×1010 cm− 2 InN quantum dots (QDs) was grown by the two-step growth method. The InN nucleation, InN decomposition and In adatom diffusion in the step-1, annealing and the step-2 process, respectively, determined the density, shape and size distribution of the InN QDs. Especially in the InN nucleation density in step-1 process dominate the size distribution of the InN QDs. The bimodal size distribution of the two-step growth InN QDs can be suppressed by increasing the InN QDs nucleation density. The photoluminescence (PL) peak energy at 1.137 eV for InN QDs with average height of 6 nm the calculated confinement energy is ~ 356 meV and the electron concentration is estimated to be 2×1018 cm− 3. The two-step growth method can maintain both the InN QDs density and the optical quality, indicating a potential technique for future optoelectronic device applications.