Reactive Ion Etch Initiation Delay in BCl[sub 3]∕SF[sub 6]∕Ar Plasmas Due to Native Oxide Removal in NH[sub 4]OH∕H[sub 2]O-Reference-Cited by-同舟云学术

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Reactive Ion Etch Initiation Delay in BCl[sub 3]∕SF[sub 6]∕Ar Plasmas Due to Native Oxide Removal in NH[sub 4]OH∕H[sub 2]O

Published:1999 Issue:1 Volume:2 Page:43
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:
Short-container-title:Electrochem. Solid-State Lett.

Author:

Nordheden Karen J.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2/O2 Neutral Beam;Plasma Chemistry and Plasma Processing;2010-08-29

2. The diabetic foot: Charcot joint and osteomyelitis;Nuclear Medicine Communications;2006-09

3. Amputation as a marker of the quality of foot care in diabetes;Diabetologia;2004-12

4. Study of highly selective wet gate recess process for Al[sub 0.25]Ga[sub 0.75]As/GaAs based pseudomorphic high electron mobility transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

5. Selective reactive ion etching of GaAs/AlAs in BCl[sub 3]/SF[sub 6] for gate recess;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

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