Low-Energy Ion Implantation Using the Arsenic Dimer Ion: Process Characterization and Throughput Improvement-Reference-Cited by-同舟云学术

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Low-Energy Ion Implantation Using the Arsenic Dimer Ion: Process Characterization and Throughput Improvement

Published:2005 Issue:8 Volume:152 Page:G623
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kopalidis Peter,Freer Brian S.,Rathmell Mark

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. SEMATECH 2001 International Technology Roadmap for Semiconductors (ITRS), Semiconductor Industry Association, San Jose, CA (2001).

2. D.C. Jacobson, K. Bourdelle, H.-J. Gossmann, M. Sosnowski, M.A. Albano, V. Babaram, J.M. Poate, A. Agarwal, A. Perel, and T. Horsky , in13th International Conference on Ion Implantation Technology Proceedings, 300, Alpbach, Austria, Sept. 2000.

3. A Study of Atomic and Molecular Arsenic Ion‐Implanted Silicon

4. A. Agarwal, B.A. Stevenson, M.S. Ameen, B.S. Freer, J.M. Poate, Y. Ohta, K. Nakajima, and K. Kimura , in14th International Conference on Ion Implantation Technology Proceedings, 119, Taos, NM, Sept. 2002.

5. M.A. Sahiner, S.W. Novak, J. Woicik, J. Liu, and V. Krishnamoorty , in13th International Conference on Ion Implantation Technology Proceedings, 600, Alpbach, Austria, Sept. 2000.

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