InGaN Light-Emitting Diodes with Embedded Roughened Structure in the GaN/Sapphire Interface Formed Using Laser Decomposition Process-Reference-Cited by-同舟云学术

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InGaN Light-Emitting Diodes with Embedded Roughened Structure in the GaN/Sapphire Interface Formed Using Laser Decomposition Process

Published:2012 Issue:2 Volume:1 Page:R62-R65
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Lin Chia-Feng,Huang Wan-Chun,Chen Sih-Han,Hsieh Tsung-Han,Tsai Peng-Han,Yu Tzu-Yun,Yang Chung-Chieh

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference20 articles.

1. White Light Emission of Monolithic Carbon-Implanted InGaN–GaN Light-Emitting Diodes

2. Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire

3. Nitride-Based LEDs With 800<tex>$^circhboxC$</tex>Grown p-AlInGaN–GaN Double-Cap Layers

4. Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes

5. Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and optical properties of laser irradiation treated vertical light‐emitting diodes;Electronics Letters;2016-06

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