The Effect of Slurry Properties on the CMP Removal Rate of Boron Doped Polysilicon
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Role of amines and amino acids in enhancing the removal rates of undoped and P-doped polysilicon films during chemical mechanical polishing
2. Particulate Science and Technology in the Engineering of Slurries for Chemical Mechanical Planarization
3. Li Y. , editor. Microelectronic Applications of Chemical Mechanical Planarization. Wiley Interscience; 2007.
4. Chemical mechanical planarization for microelectronics applications
5. Hong L. David C. . Tribology in Chemical-Mechanical Planarization. Taylor & Francis Group; 2005.
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