Impact of Annealing on Contact Formation and Stability of IGZO TFTs
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Present status of amorphous In–Ga–Zn–O thin-film transistors
2. Review paper: Transparent amorphous oxide semiconductor thin film transistor
3. A Full-Swing a-IGZO TFT-Based Inverter With a Top-Gate-Bias-Induced Depletion Load
4. High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes
5. Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT
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