Low Temperature (<100°C) Deposition of Aluminum Oxide Thin Films by ALD with O[sub 3] as Oxidant-Reference-Cited by-同舟云学术

Low Temperature (<100°C) Deposition of Aluminum Oxide Thin Films by ALD with O[sub 3] as Oxidant

Published:2006 Issue:5 Volume:153 Page:F69
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kim Seong Keun,Lee Suk Woo,Hwang Cheol Seong,Min Yo-Sep,Won Jeong Yeon,Jeong Jaehack

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Study of ultrathin Al2O3/Si(001) interfaces by using scanning reflection electron microscopy and x-ray photoelectron spectroscopy

2. Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

3. High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation

4. Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si

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