Double-Sided Mesoporous Silicon with Embedded Quasi-Regular Arranged Ferromagnetic Nanostructures Fabricated by Electrodeposition

Abstract

Porous silicon matrices fabricated by wet etching are used as template for the deposition of metal nanostructures. The anodization of the silicon wafer is performed on one or on both sides in employing a double-tank electrolytic cell. The resulting porous layers are subsequently filled with a ferromagnetic metal by electrodeposition. In case of double-sided samples an alternating pulsed current is applied. These two processes are extended to ultrathin samples with an entire thickness of about 60 µm. The morphology of the porous structure exhibits average pore-diameters of 60 nm, a mean pore-spacing of 45 nm and a pore-length of 40 µm. Ferromagnetic metals are electrochemically deposited as nanostructures with a specific distribution within the pores.