Hyperspectral Electroluminescence Characterization of OFF-State Device Characteristics in Proton Irradiated High Voltage AlGaN/GaN HEMTs
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Radiation hardness of gallium nitride
2. Review of radiation damage in GaN-based materials and devices
3. Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation
4. Review—Ionizing Radiation Damage Effects on GaN Devices
5. Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors
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2. Understanding High-Energy 75-MeV Sulfur-Ion Irradiation-Induced Degradation in GaN-Based Heterostructures: The Role of the GaN Channel Layer;IEEE Transactions on Electron Devices;2021-01
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4. Neutron Irradiation of AlGaN Polarization Doped Field Effect Transistors;ECS Journal of Solid State Science and Technology;2020-07-20
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