Effects of Cell Distance on the Performance of GaN High-Voltage Light Emitting Diodes-Reference-Cited by-同舟云学术

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Effects of Cell Distance on the Performance of GaN High-Voltage Light Emitting Diodes

Published:2012-08-29 Issue:5 Volume:1 Page:R21-R23
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Horng R.-H.,Shen K.-C.,Kuo Y.-W.,Wuu D.-S.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Cascade GaN-based blue micro-light-emitting diodes for dual function of illumination and visible light communication;Journal of Physics D: Applied Physics;2020-06-15

3. Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure;physica status solidi (a);2019-06-04

4. Research Progress of High-Voltage LED Chip;SPECTROSC SPECT ANAL;2018

5. Fabrication and Study on Red Light Micro-LED Displays;IEEE Journal of the Electron Devices Society;2018

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