Film Property Requirements for Hermetic Low-k a-SiOxCyNz:H Dielectric Barriers-Reference-Cited by-同舟云学术

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Film Property Requirements for Hermetic Low-k a-SiOxCyNz:H Dielectric Barriers

Published:2012 Issue:6 Volume:1 Page:N115-N122
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

King S. W.,Jacob D.,Vanleuven D.,Colvin B.,Kelly J.,French M.,Bielefeld J.,Dutta D.,Liu M.,Gidley D.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference115 articles.

1. Low dielectric constant materials for microelectronics

2. Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films

3. Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition

4. Low dielectric constanta-SiOC:H films as copper diffusion barrier

5. Dielectric Constant of Porous Ultra Low-κ Thin Films

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