Liquid Phase Epitaxial Growth of Semi‐insulating GaAs Crystals-Reference-Cited by-同舟云学术

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Liquid Phase Epitaxial Growth of Semi‐insulating GaAs Crystals

Published:1977-03-01 Issue:3 Volume:124 Page:441-447
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Otsubo Mutsuyuki¹,Miki Hidejiro¹

Affiliation:

1. Mitsubishi Electric Corporation, Central Research Laboratories, Itami, Hyogo 664 Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2133321/pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selected 3d-Transition Metals in Gallium Antimonide: Vanadium, Titanium and Iron;Crystal Research and Technology;1997

2. Diffusion of Iron into GaAs from a Spin‐on Source;Journal of The Electrochemical Society;1990-08-01

3. Field effects in semiconductor double‐injection devices;Journal of Applied Physics;1988-06

4. Fe and Cr doping of liquid‐phase epitaxial In0.53Ga0.47As/InP;Journal of Applied Physics;1985-01-15

5. Semi-insulating In0.53Ga0.47As by Fe doping;Journal of Crystal Growth;1983-11

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