Amorphous Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Material-Reference-Cited by-同舟云学术

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Amorphous Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Material

Published:2019-12-19 Issue:4 Volume:11 Page:311-318
ISSN:1938-6737
Container-title:ECS Transactions
language:
Short-container-title:ECS Trans.

Author:

Lopes Joao M.,Roeckerath Martin,Heeg Tassilo,Schubert Jurgen,Littmark Uffe,Mantl Siegfried,Besmehn Astrid,Myllymaki Pia,Niinistö Lauri,Adamo Carolina,Schlom Darrel G.

Publisher

The Electrochemical Society

Link

https://iopscience.iop.org/article/10.1149/1.2779570/pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth, characterization, and transport properties of ternary (Bi1−xSbx)2Te3topological insulator layers;Journal of Physics: Condensed Matter;2016-10-17

2. Ge interface engineering using ultra-thin La2O3and Y2O3films: A study into the effect of deposition temperature;Journal of Applied Physics;2014-03-21

3. Interface engineering of Ge using thulium oxide: Band line-up study;Microelectronic Engineering;2013-09

4. On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks;Journal of Applied Physics;2012-08-15

5. Structure and properties of films based on HfO2-Sc2O3 double oxide;Journal of Structural Chemistry;2011-08

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