Visualization of Single Atomic Steps on An Ultra-Flat Si(100) Surface by Advanced Differential Interference Contrast Microscopy-Reference-Cited by-同舟云学术

Visualization of Single Atomic Steps on An Ultra-Flat Si(100) Surface by Advanced Differential Interference Contrast Microscopy

Published:2011 Issue:9 Volume:14 Page:H351
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kobayashi Shin-Ichiro,Kim Youn-Geun,Wen Rui,Yasuda Kohei,Fukidome Hirokazu,Suwa Tomoyuki,Kuroda Rihito,Li Xiang,Teramoto Akinobu,Ohmi Tadahiro,Itaya Kingo

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference23 articles.

1. Ultra-Large-Scale Step-Free Terraces Formed at the Bottom of Craters on Vicinal Si(111) Surfaces

2. Fabrication and Integration of Nanostructures on Si Surfaces

3. Formation and stability of large step-free areas on Si(001) and Si(111)

4. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

5. Evidence of spontaneous formation of steps on silicon (100)

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