Stability of Carbon-Doped Silicon Oxide Low-k Thin Films-Reference-Cited by-同舟云学术

Stability of Carbon-Doped Silicon Oxide Low-k Thin Films

Published:2004 Issue:4 Volume:151 Page:F73
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Wang Y. H.,Kumar R.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference12 articles.

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2. H. Cui, H. Q. Lu, I. Bhat, S. Murarka, W. Lanford, and W. D. Li, inProceedings of the 2001 International Interconnect Technology Conference, IEEE, p. 45, July 3-6, 2001.

3. Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition

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