Surface Damage on GaAs Etched Using a Multipolar Electron Cyclotron Resonance Source-Reference-Cited by-同舟云学术

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Surface Damage on GaAs Etched Using a Multipolar Electron Cyclotron Resonance Source

Published:1994-01-01 Issue:1 Volume:141 Page:255-258
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Ko K. K.¹,Pang S. W.¹

Affiliation:

1. Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2054694/pdf

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photocapacitance of deep levels in GaP crystals surface treated by reactive ion etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

2. Dry Etching Technology for Optical Devices;WDM Technologies;2002

3. Surface Damage Induced by Dry Etching;Handbook of Advanced Plasma Processing Techniques;2000

4. Plasma Etching of III–V Nitrides;Processing of Wide Band Gap Semiconductors;2000

5. Low‐Pressure Etching of Nanostructures and Via Holes Using an Inductively Coupled Plasma System;Journal of The Electrochemical Society;1999-02-01

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