Author:
Velamala Jyothi,Wang Chi-Chao,Zheng Rui,Ye Yun,Cao Yu
Abstract
Intrinsic device variability and reliability, such as dopant and geometry fluctuations, as well as temporal degradation, poses a fundamental challenge to CMOS scaling and IC design. Their importance is rapidly increasing as device feature size approaches the atom dimension. Predictive modeling helps benchmark its impact on circuit performance, indicating the trend, priority and techniques of variability control. Furthermore, statistical interaction between static variation and temporal shift is investigated.
Publisher
The Electrochemical Society
Cited by
1 articles.
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