High-Reliability Ta[sub 2]O[sub 5] Metal–Insulator–Metal Capacitors with Cu-Based Electrodes-Reference-Cited by-同舟云学术

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High-Reliability Ta[sub 2]O[sub 5] Metal–Insulator–Metal Capacitors with Cu-Based Electrodes

Published:2006 Issue:5 Volume:153 Page:G492
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Tsai Kou-Chiang,Wu Wen-Fa,Chao Chuen-Guang,Kuan Cheng-Ping

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

2. A. Kar-Roy, C. Hu, M. Racanelli, C. A. Compton, P. Kempf, G. Jolly, P. N. Sherman, J. Zheng, Z. Zhang, and A. Yin , inProceedings of the IITC, p. 245 (1999).

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2. Flexible inkjet printed high-k HfO2-based MIM capacitors;Journal of Materials Chemistry C;2016

3. In-Situ Stress Measurement during Heat Treatment of Amorphous Tantalum Oxide;ECS Journal of Solid State Science and Technology;2015

4. Application of an Extended Unified Schottky-Poole-Frenkel Model to High-k Capacitor Structures Used in Analog Integrated Circuit Technology;ECS Transactions;2013-05-03

5. Electrochemically Induced Stresses in Amorphous Tantalum Oxide Films;Journal of The Electrochemical Society;2013

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