Optimized Process and Tool Design for GaN Chemical Mechanical Planarization
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Shur M. Davis R. F. , GaN-based Materials And Devices: Growth, Fabrication, Characterization And Performance, 33rd Ed., World Scientific Publishing Company, River Edge, N.J. (2004).
2. INSULATED GATE III-N HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
3. High Voltage AlGaN/GaN Heterojunction Transistors
4. Fabrication and performance of GaN electronic devices
5. Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate;Advanced Materials Interfaces;2024-03-04
2. Bias-assisted photoelectrochemical planarization of GaN (0001) with impurity concentration distribution;AIP Advances;2023-09-01
3. Chemical-mechanical Polishing of N-polar GaN for GaN HEMT on Diamond Bonding;2022 IEEE 24th Electronics Packaging Technology Conference (EPTC);2022-12-07
4. Palladium Chemical Mechanical Planarization in Packaging and Barrier Level Integration;ECS Journal of Solid State Science and Technology;2022-05-01
5. Effects of Chemical-Electrical and Mechanical Parameters on Electrical-induced Chemical Mechanical Polishing of GaN;ECS Journal of Solid State Science and Technology;2021-12-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3