1. Design of IGBT with integral freewheeling diode
2. Takahashi H. Yamamoto A. Aono S. Minato T. , in Proc. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Kitakyushu, Japan, p. 133 (2004).
3. Rüthing H. Hille F. Niedernostheide F. J. Schulze H. J. Brunner B. , in Proc. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jeju, Korea, p. 89 (2007).
4. Takahashi K. Yoshida S. Noguchi S. Kuribayashi H. Nashida N. Kobayashi Y. Kobayashi H. Mochizuki K. Ikeda Y. Ikawa O. , in Proc. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hawaii, USA, p. 131 (2014).
5. Rahimo M. Schlapbach U. Kopta A. Vobecky J. Schneider D. Baschnagel A. , in Proc. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Orlando, USA, p. 68 (2008).