Nitrogen Effects on the Integrity of Silicon Dioxide Grown on Polycrystalline Silicon-Reference-Cited by-同舟云学术

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Nitrogen Effects on the Integrity of Silicon Dioxide Grown on Polycrystalline Silicon

Published:2007 Issue:10 Volume:154 Page:H883
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lai Chao Sung,Kao Chyuan Haur,Lee Chung Len,Lei Tan Fu

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Thin inter-polyoxide films for flash memories grown at low temperature (400/spl deg/C) by oxygen radicals

2. Characterization of thermally oxidized n+polycrystalline silicon

3. Surface Roughness and Electrical Conduction of Oxide/Polysilicon Interfaces

4. On the electrical conduction in the interpolysilicon dielectric layers

5. Polarity asymmetry of oxides grown on polycrystalline silicon

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