Author:
Fu Chunxiao,Xu Fan,Cheng Yuhua
Abstract
Abstract: This paper presents two-dimensional process and device(15V) simulation results and optimization of power device in a 0.35um Bipolar/CMOS/DMOS(BCD) process. Detailed device simulations and structure designs have been done. Test structures with specific considerations have been developed. With both simulation and experimental results, the optimized devices show excellent performance, which have been demonstrated with characterization results from devices on wafers from process qualification lots.
Publisher
The Electrochemical Society
Cited by
1 articles.
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