Author:
Yamamoto Shotaro,Kosemura Daisuke,C.M.Yusoff S.Norhidayah,Kijima Takahiro,Imai Ryosuke,Takeuchi Kazuma,Yokogawa Ryo,Usuda Koji,Ogura Atsushi
Abstract
We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.
Publisher
The Electrochemical Society
Cited by
2 articles.
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