Low-Resistance Ti/Au Ohmic Contact on (001) Plane Ga2O3 Crystal

Author:

Kim Yukyung,Kim Man-Kyung,Baik Kwang HyeonORCID,Jang SoohwanORCID

Abstract

We studied the Ti/Au Ohmic contact on (001) plane Ga2O3 single crystal wafer as a function of annealing temperature and crystallographic orientation. The lowest specific contact resistances of ∼5 × 10−4 Ω·cm2 were obtained at 400 °C annealing temperature under nitrogen ambience. The Ohmic metal contact became degraded when annealed above 500 °C. The formation of Ti oxide might be responsible for the degradation of Ohmic contact at high annealing temperatures. In comparison with (010) Ga2O3 substrate, the Ohmic contact could be more easily formed on ( 2 ¯ 01 ) and (001) Ga2O3 planes, possibly due to high surface energy and dangling bond density. It is notable that the contact properties did not show any particular dependence on in-plane azimuth angles on (001) Ga2O3 substrate.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3