Abstract
The current study aims to tailor the structure, optical and shielding characteristics of ZnMn2O4 nanostructures through Sn-doping. ZnMn2−xSnxO4 nanostructures were synthesized by the sol-gel technique. The sample containing 5% Sn exhibits the highest level of absorbance. ZnMn2−xSnxO4 system exhibits a maximum optical energy gap value of 2.55 eV when doped with 10% Sn, and a minimum optical energy gap value of 2.23 eV when doped with 5% Sn. The refractive index values of the samples containing 5 and 10% Sn are the highest in comparison to the other samples. The values of the non-linear optical parameters became maximum as x = 0.05. The radiation shielding constants were computed by Phy-X/PSD software. The half value length and tenth value length values reduced as ZnMn2O4 doped with Sn, implying that doped samples have better shielding capabilities than undoped ZnMn2O4. When compared to doped samples, ZnMn2O4 has the highest fast neutron removal cross-section value. ZnMn2-xSnxO4 samples demonstrate a greater rate of absorption for photons with lower energy as opposed to those with higher energy.
Publisher
The Electrochemical Society