p-Type Trigate Junctionless Nanosheet MOSFET: Analog/RF, Linearity, and Circuit Analysis

Abstract

Silicon (Si) nanosheet (NS) metal-oxide semiconductor field effect transistors (MOSFETs) are realized as an outstanding structure to obtain better area scaling and power performance compared to FinFETs. The Si NS MOSFETs provide high current drivability due to wider effective channel (W eff) and maintain better short channel performance. Here, the performance of junctionless (JL) SOI NS p-MOSFET is evaluated by invoking HfxTi1−xO2 gate stack to overcome adverse short channel effects (SCEs). The device performance is enhanced using various spacer dielectrics and the electrical characteristics are presented. Moreover, the effect of NS width variation on I ON/I OFF, SS, V th is presented and the analog/RF metrics of the device are evaluated. The power consumption, dynamic power, and static power analyses of NS MOSFET is presented with respect to the ITRS road map. Our investigation reveals that the device exhibits an I ON/I OFF ratio of more than ∼106 with NS widths of 10 to 30 nm, respectively. The device exhibits better performance (I ON) with higher NS widths and ensures potential towards high-performance applications. However, with an increase in NS widths the threshold voltage (V th) tends to downfall and leads to deterioration in subthreshold performance . With high-k spacer dielectric the device exhibits better static power consumption for the CMOS inverter. By careful control of NS width and effective usage of spacer dielectric ensures better p-MOSFET design for future technology nodes.