Performance Evaluation of Spacer Dielectric Engineered Vertically Stacked Junctionless Nanosheet FET for Sub-5 nm Technology Node

Author:

Valasa SrestaORCID,Tayal ShubhamORCID,Thoutam Laxman Raju

Abstract

This manuscript for the first time provides insights on the impact of different spacer materials for the vertically stacked Junctionless Nanosheet Field Effect Transistor (JL-NSFET). The analog/RF performances of several single-k and dual-k spacers in two approaches namely (1) inner high-k + outer low-k and (2) inner low-k + outer high-k are explored at 3 nm gate length. It is noticed that the use of TiO2 spacer improves analog performance of the JL-NSFET whereas the usage of SiO2 improves the RF performance of the device when single-k spacer has been used. The intrinsic gain (Av) of the JL-NSFET is improved by ∼1.74× with TiO2 as compared to SiO2 spacer. Moreover, it is observed that the dual-k approach with inner high-k + outer low-k combination gives better analog/RF performances compared to inner low-k + outer high-k and single-k spacer combinations. Furthermore, the increase in length (Lsp,hk) of inner high-k spacer length provides improved analog characteristics at the marginal cost of RF performance.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3