Abstract
Cu direct bonding has been achieved at 150 °C by using (111)-oriented nanotwinned Cu (nt-Cu) because it has the fastest surface diffusivity. In this study, nt-Cu was bonded at even lower temperature of 120 °C by roughening one of the nt-Cu surfaces. However, the flat-to-flat nt-Cu could not be bonded at the same temperature. This result violates a bonding concept that “for good wafer bonding, the contact area must be as large as possible”. This paper discusses in detail two possible bonding mechanisms: diffusion and creep/plastic deformation.
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
17 articles.
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