Oxidizing Species Dependence of the Interface Reaction during Atomic-Layer-Deposition Process and Post-Deposition-Anneal

Abstract

The influence of the post deposition anneal (PDA) to the Al2O3 film quality was investigated. In the case of PDA using Ar/O2 plasma, the Al2O3/substrate interface quality was degraded because the oxidation at Al2O3/substrate interface proceeds. In the case of PDA using H2O, the gate leakage current can be decreased. However, H2O annealing induced the voltage dependence of capacitance due to increase the traps in the Al2O3 film. It is considered that the H2O annealing is effective to reduce the gate leakage current and fixed charges in the Al2O3 film but is induced to increase the traps in the film.