The Role of the Methyl and Hydroxyl Groups of Low-k Dielectric Films on the Nucleation of Ruthenium by ALD-Reference-Cited by-同舟云学术

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The Role of the Methyl and Hydroxyl Groups of Low-k Dielectric Films on the Nucleation of Ruthenium by ALD

Published:2008 Issue:8 Volume:11 Page:H210
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Heo Jaeyeong,Won Seok-Jun,Eom Dail,Lee Sang Young,Ahn Young Bae,Hwang Cheol Seong,Kim Hyeong Joon

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference18 articles.

1. 5nm ruthenium thin film as a directly plateable copper diffusion barrier

2. Electrodeposition of Copper Thin Film on Ruthenium

3. Binary Alloy Phase Diagrams , 2nd ed., T. B. Massalski , Editor, p. 1467, American Society of Metals, Materials Park, OH (1990).

4. Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition

5. Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

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2. Insight into Selective Surface Reactions of Dimethylamino-trimethylsilane for Area-Selective Deposition of Metal, Nitride, and Oxide;The Journal of Physical Chemistry C;2020-03-13

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