Effect of Process Pressure on Atomic Layer Deposition of Al[sub 2]O[sub 3]-Reference-Cited by-同舟云学术

Effect of Process Pressure on Atomic Layer Deposition of Al[sub 2]O[sub 3]

Published:2007 Issue:11 Volume:154 Page:H967
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Li Ming-Yen,Chang Yung-Yuan,Wu Hsiao-Che,Huang Cheng-Sung,Chen Jen-Chung,Lue Jen-Lang,Chang Shieh-Ming

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. H. Seidl, M. Gutsche, U. Schroeder, A. Birner, T. Hecht, S. Jakschik, J. Luetzen, M. Kerber, S. Kudelka, T. Popp, et al. ,Tech. Dig. - Int. Electron Devices Meet., p. 839, San Francisco (2002).

2. Improvement in Al2O3 dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique

3. D. A. Buchanan, E. P. Gusev, E. Cartier, H. Okorn-Schmidt, K. Rim, M. A. Gribelyuk, A. Mocuta, A. Ajmera, M. Copel, S. Guha, et al. ,Tech. Dig. - Int. Electron Devices Meet., p. 223, San Francisco (2000).

4. Study of ultrathin Al2O3/Si(001) interfaces by using scanning reflection electron microscopy and x-ray photoelectron spectroscopy

5. T. Suntola ,Handbook of Crystal Growth, Elsevier, Amsterdam (1994).

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Control of ZIF‐62 and a_gZIF‐62 Film Thickness within Asymmetric Tubular Supports through Pressure and Dose Time Variation of Atomic Layer Deposition;Small;2024-02-02

2. Improving the Properties of SrRuO₃ Electrode Films Grown by Atomic Layer-Deposited SrO and Pulsed Chemical Vapor-Deposited RuO₂ Using Al₂O₃ Capping Layers;ACS Applied Electronic Materials;2023-07-18

3. Synthesis and characterization of N-TMS-2-pyridinamine dimethyl-aluminum: A dormant precursor;Inorganic Chemistry Communications;2022-08

4. A numerical approach on the selection of the purge flow rate in an atomic layer deposition (ALD) process;Physics of Fluids;2022-05

5. Tunable Dielectric and Thermal Properties of Oxide Dielectrics via Substrate Biasing in Plasma-Enhanced Atomic Layer Deposition;ACS Applied Materials & Interfaces;2020-09-11